Physical Models of Semiconductor Quantum Devices by Ying Fu

By Ying Fu

The technology and expertise in relation to nanostructures maintains to obtain major awareness for its purposes to varied fields together with microelectronics, nanophotonics, and biotechnology.
This booklet describes the fundamental quantum mechanical rules underlining this speedy constructing box.
From the elemental ideas of quantum mechanics to nanomaterial houses, from machine physics to analyze and improvement of latest structures, this identify is aimed toward undergraduates, graduates, postgraduates, and researchers.

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Extra resources for Physical Models of Semiconductor Quantum Devices

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For z ≥ 0, In atoms deposit to the cation sites of the lattice, while As and P atoms deposit to anion sites according to the mole fraction x of As atoms. , atomic layer-by-layer growth along the z direction. For each growing atomic layer, we allow the atoms on the growing layer as well as atoms in three atomic layers beneath the growing layer to adjust their spatial positions in order to minimize the strain energy. , the strain energy density, along the z direction, thus obtained, is denoted as VFF 48 1 Semiconductor Materials Fig.

Moreover, the application of Si1−x Gex /Si materials is restricted by the strain in the epitaxial layers. To compensate the strain, C atoms with an atomic diameter smaller than the ones of both Si and Ge atoms are introduced into the Si-Ge system to form Si1−x−y Gex Cy alloys. The substitutional C atoms in Si1−y Cy and related alloys also offer an additional parameter for tailoring the energy band structure [37]. The investigation on Si1−y Cy and related alloys is thus of great importance to understand the bandgap engineering for Si-based semiconductor materials.

The local lattice structure of the InAs QD is determined by adjusting spatial coordinates of lattice sites in order to minimize the total strain energy. The adjustment of the lattice sites can be performed by a Monte Carlo scheme in such a way that we generate one set of random walkings for all lattice sites, check the total elastic energy. If the total elastic energy is reduced, the set of the random walkings is allowed and the lattice sites are then upgraded. 46 1 Semiconductor Materials Fig.

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